All MOSFET. ES6U42 Datasheet

 

ES6U42 Datasheet and Replacement


   Type Designator: ES6U42
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.39 Ohm
   Package: WEMT6
 

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ES6U42 Datasheet (PDF)

 ..1. Size:174K  rohm
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ES6U42

2.5V Drive Pch+SBD MOSFET ES6U42 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET / WEMT6Schottky barrier diode (6) (5) (4) Features 1) Pch MOSFET and schottky barrier diode are put in WEMT6 package. (1) (2) (3)2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. Abbreviated symbol : U42

 9.1. Size:148K  rohm
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ES6U42

2.5V Drive Nch+SBD MOSFET ES6U41 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / WEMT6Schottky barrier diode (6) (5) (4)Features 1) Nch MOSFET and schottky barrier diode- are put in WEMT6 package. 2) High-speed switching, Low On-resistance. (1) (2) (3)3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. Abbreviated symbo

Datasheet: EM6K6 , EM6K7 , EMH2314 , EMH2417R , EMH2418R , ES6U2 , ES6U3 , ES6U41 , AON7410 , F10F50VX2 , F10V50VX2 , F10W50 , F10W50C , F10W90HVX2 , F11F60C3M , F11F60CPM , F11F80C3M .

History: YTF440 | FQD6N50CTF | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | SIHFDC20 | P2003EVT

Keywords - ES6U42 MOSFET datasheet

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