ES6U42 Specs and Replacement
Type Designator: ES6U42
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 20 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.39 Ohm
Package: WEMT6
ES6U42 substitution
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ES6U42 datasheet
es6u42.pdf
2.5V Drive Pch+SBD MOSFET ES6U42 Structure Dimensions (Unit mm) Silicon P-channel MOSFET / WEMT6 Schottky barrier diode (6) (5) (4) Features 1) Pch MOSFET and schottky barrier diode are put in WEMT6 package. (1) (2) (3) 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. Abbreviated symbol U42 ... See More ⇒
es6u41.pdf
2.5V Drive Nch+SBD MOSFET ES6U41 Structure Dimensions (Unit mm) Silicon N-channel MOSFET / WEMT6 Schottky barrier diode (6) (5) (4) Features 1) Nch MOSFET and schottky barrier diode- are put in WEMT6 package. 2) High-speed switching, Low On-resistance. (1) (2) (3) 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. Abbreviated symbo... See More ⇒
Detailed specifications: EM6K6 , EM6K7 , EMH2314 , EMH2417R , EMH2418R , ES6U2 , ES6U3 , ES6U41 , SPP20N60C3 , F10F50VX2 , F10V50VX2 , F10W50 , F10W50C , F10W90HVX2 , F11F60C3M , F11F60CPM , F11F80C3M .
Keywords - ES6U42 MOSFET specs
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