F11F60C3M Specs and Replacement
Type Designator: F11F60C3M
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 390 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO-220F
F11F60C3M substitution
- MOSFET ⓘ Cross-Reference Search
F11F60C3M datasheet
f11f60c3m.pdf
P we MOS E o r F T O T IE U LN Untmm i P cae T 20 akg F O-2A F 1 6C M 1F 0 3 6 0 1 0 V1A 0000 11F60C3M F aue etr L wR o ON FsS t at wihn cig Ioae akg s... See More ⇒
f11f60cpm.pdf
P we MOS E o r F T O T IE U LN Untmm i P cae T 20 G akg F O-2A F 1 6C M 1F 0 P 6 0 1 0 V1A 0000 11F60CPM F aue etr L wR o ON Ioae akg sltdP cae ... See More ⇒
Detailed specifications: ES6U3, ES6U41, ES6U42, F10F50VX2, F10V50VX2, F10W50, F10W50C, F10W90HVX2, 5N65, F11F60CPM, F11F80C3M, F11S80C3, F12F50VX2, F12W50VX2, F15F60C3M, F15W50VX2, F16F60CPM
Keywords - F11F60C3M MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IPD046N08N5
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