All MOSFET. F11F60C3M Datasheet

 

F11F60C3M MOSFET. Datasheet pdf. Equivalent


   Type Designator: F11F60C3M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO-220F

 F11F60C3M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

F11F60C3M Datasheet (PDF)

 ..1. Size:153K  shindengen
 f11f60c3m.pdf

F11F60C3M F11F60C3M

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 7.1. Size:150K  shindengen
 f11f60cpm.pdf

F11F60C3M F11F60C3M

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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FHF18N50C

 

 
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