F11F60CPM Datasheet and Replacement
Type Designator: F11F60CPM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO-220F
F11F60CPM substitution
F11F60CPM Datasheet (PDF)
f11f60cpm.pdf
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f11f60c3m.pdf
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Datasheet: ES6U41 , ES6U42 , F10F50VX2 , F10V50VX2 , F10W50 , F10W50C , F10W90HVX2 , F11F60C3M , IRF530 , F11F80C3M , F11S80C3 , F12F50VX2 , F12W50VX2 , F15F60C3M , F15W50VX2 , F16F60CPM , F20F60C3M .
History: BLP10N20J-P | GSM1032
Keywords - F11F60CPM MOSFET datasheet
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History: BLP10N20J-P | GSM1032
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