All MOSFET. F11F60CPM Datasheet

 

F11F60CPM Datasheet and Replacement


   Type Designator: F11F60CPM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-220F
 

 F11F60CPM substitution

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F11F60CPM Datasheet (PDF)

 ..1. Size:150K  shindengen
 f11f60cpm.pdf pdf_icon

F11F60CPM

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 7.1. Size:153K  shindengen
 f11f60c3m.pdf pdf_icon

F11F60CPM

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Datasheet: ES6U41 , ES6U42 , F10F50VX2 , F10V50VX2 , F10W50 , F10W50C , F10W90HVX2 , F11F60C3M , IRF530 , F11F80C3M , F11S80C3 , F12F50VX2 , F12W50VX2 , F15F60C3M , F15W50VX2 , F16F60CPM , F20F60C3M .

History: APT3580BN | RSR030N06

Keywords - F11F60CPM MOSFET datasheet

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