F11S80C3 PDF and Equivalents Search

 

F11S80C3 Specs and Replacement

Type Designator: F11S80C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 740 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: STO-220

F11S80C3 substitution

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F11S80C3 datasheet

 ..1. Size:154K  shindengen
 f11s80c3.pdf pdf_icon

F11S80C3

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Detailed specifications: F10F50VX2, F10V50VX2, F10W50, F10W50C, F10W90HVX2, F11F60C3M, F11F60CPM, F11F80C3M, AON6380, F12F50VX2, F12W50VX2, F15F60C3M, F15W50VX2, F16F60CPM, F20F60C3M, F20S60C3, F20W50VX2

Keywords - F11S80C3 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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