All MOSFET. F25F60CPM Datasheet

 

F25F60CPM Datasheet and Replacement


   Type Designator: F25F60CPM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: TO-220F
 

 F25F60CPM substitution

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F25F60CPM Datasheet (PDF)

 ..1. Size:801K  shindengen
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F25F60CPM

F 5 6C M2F 0 P C A A T RS I DA MSH R C E ITC IGRA Typical Output Characteristics Transfer Characteristics Static Drain-Source On-state Resistance vs Drain Current

Datasheet: F15W50VX2 , F16F60CPM , F20F60C3M , F20S60C3 , F20W50VX2 , F20W60C3 , F21F60CPM , F24W60C3 , RFP50N06 , F31W60CP , F35W60C3 , F39W60CP , F3F90HVX2 , F3S90HVX2 , F3V50VX2 , F3V90HVX2 , F47W60C3 .

History: PHB32N06 | TPHR9003NL | 2SK387 | HY3003B | FDPF8N60ZUT | STF4NK50ZD | RU40S4H

Keywords - F25F60CPM MOSFET datasheet

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