F31W60CP Specs and Replacement
Type Designator: F31W60CP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 31 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 130 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
Package: TO-3P
F31W60CP substitution
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F31W60CP datasheet
Detailed specifications: F16F60CPM, F20F60C3M, F20S60C3, F20W50VX2, F20W60C3, F21F60CPM, F24W60C3, F25F60CPM, 2SK3568, F35W60C3, F39W60CP, F3F90HVX2, F3S90HVX2, F3V50VX2, F3V90HVX2, F47W60C3, F4F60VX2
Keywords - F31W60CP MOSFET specs
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History: RD3H080SP | FQA13N50CF
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