F4F60VX2 Datasheet and Replacement
Type Designator: F4F60VX2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 21 nC
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: TO-220F
F4F60VX2 substitution
F4F60VX2 Datasheet (PDF)
2sk2563 f4f60vx2.pdf

SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2563Case : E-packCase : FTO-220(Unit : mm)(F4F60VX2)600V4AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed.APPLICATION Switching po
Datasheet: F31W60CP , F35W60C3 , F39W60CP , F3F90HVX2 , F3S90HVX2 , F3V50VX2 , F3V90HVX2 , F47W60C3 , CS150N03A8 , F5018-S , F5020-S , F5041 , F5042 , F5042-S , F5043 , F5043-S , F5048 .
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