F4F60VX2 Specs and Replacement
Type Designator: F4F60VX2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: TO-220F
F4F60VX2 substitution
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F4F60VX2 datasheet
2sk2563 f4f60vx2.pdf
SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2563 Case E-pack Case FTO-220 (Unit mm) (F4F60VX2) 600V4A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching po... See More ⇒
Detailed specifications: F31W60CP, F35W60C3, F39W60CP, F3F90HVX2, F3S90HVX2, F3V50VX2, F3V90HVX2, F47W60C3, IRF520, F5018-S, F5020-S, F5041, F5042, F5042-S, F5043, F5043-S, F5048
Keywords - F4F60VX2 MOSFET specs
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History: SUM90N06-5M5P | CHM4301ZGP
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