FC551601 Datasheet and Replacement
Type Designator: FC551601
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 0.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 7 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
Package: SMINI5-F3-B
- MOSFET Cross-Reference Search
FC551601 Datasheet (PDF)
fc551601.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).FC551601Silicon N-channel MOS FETFor switching circuits Overview PackageFC551601 is N-channel dual type small signal MOS FET employed small size Codesurface mounting package. SMini5-F3-B Pin Name Features 1: Gate (FET1) 4: Drain (FET2) 2: Source (FET1/2) 5: Drain (FET1) Low drain-source ON
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: 2SJ473-01S | IRF7759L2TR1PBF
Keywords - FC551601 MOSFET datasheet
FC551601 cross reference
FC551601 equivalent finder
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History: 2SJ473-01S | IRF7759L2TR1PBF



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