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FC551601 Specs and Replacement

Type Designator: FC551601

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm

Package: SMINI5-F3-B

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FC551601 datasheet

 ..1. Size:418K  panasonic
 fc551601.pdf pdf_icon

FC551601

This product complies with the RoHS Directive (EU 2002/95/EC). FC551601 Silicon N-channel MOS FET For switching circuits Overview Package FC551601 is N-channel dual type small signal MOS FET employed small size Code surface mounting package. SMini5-F3-B Pin Name Features 1 Gate (FET1) 4 Drain (FET2) 2 Source (FET1/2) 5 Drain (FET1) Low drain-source ON... See More ⇒

Detailed specifications: FA57SA50LCP, FC40SA50FKP, FC4A22050L, FC4B21080L, FC4B21300L, FC4B21320L, FC4B22070L, FC4B22180L, IRFZ44N, FC591301, FC591601, FC654601, FC694301, FC694308, FC694309, FC694601, FC6A21060L

Keywords - FC551601 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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