FC551601 Datasheet and Replacement
Type Designator: FC551601
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 7 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
Package: SMINI5-F3-B
FC551601 substitution
FC551601 Datasheet (PDF)
fc551601.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).FC551601Silicon N-channel MOS FETFor switching circuits Overview PackageFC551601 is N-channel dual type small signal MOS FET employed small size Codesurface mounting package. SMini5-F3-B Pin Name Features 1: Gate (FET1) 4: Drain (FET2) 2: Source (FET1/2) 5: Drain (FET1) Low drain-source ON
Datasheet: FA57SA50LCP , FC40SA50FKP , FC4A22050L , FC4B21080L , FC4B21300L , FC4B21320L , FC4B22070L , FC4B22180L , IRFZ44N , FC591301 , FC591601 , FC654601 , FC694301 , FC694308 , FC694309 , FC694601 , FC6A21060L .
History: NTD110N02RG | FDFC2P100 | AO8822 | PMV30ENEA | ZXM64N03XTC | BSC046N10NS3G | 2N6788JANTX
Keywords - FC551601 MOSFET datasheet
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History: NTD110N02RG | FDFC2P100 | AO8822 | PMV30ENEA | ZXM64N03XTC | BSC046N10NS3G | 2N6788JANTX



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