FC591601 Datasheet and Replacement
Type Designator: FC591601
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 7 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
Package: SSMINI5-F4-B
FC591601 substitution
FC591601 Datasheet (PDF)
fc591601.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).FC591601Silicon N-channel MOS FETFor switching circuits Overview PackageFC591601 is N-channel dual type small signal MOS FET employed small size Codesurface mounting package. SSMini5-F4-BPackage dimension clicks here. Click! Features Low drain-source ON resistance: RDS(on) typ. = 6 W (VGS = 4.
fc591301.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).FC591301Silicon N-channel MOS FETFor switching circuits Overview PackageFC591301 is N-channel dual type small signal MOS FET employed small size Codesurface mounting package. SSMini5-F4-BPackage dimension clicks here. Click! Features Low drain-source ON resistance: RDS(on) typ. = 2 W (VGS = 4.
Datasheet: FC4A22050L , FC4B21080L , FC4B21300L , FC4B21320L , FC4B22070L , FC4B22180L , FC551601 , FC591301 , IRF740 , FC654601 , FC694301 , FC694308 , FC694309 , FC694601 , FC6A21060L , FC6B21100L , FC6B21150L .
History: 2N6792SM | IRHMS597260 | FC694308 | SSM9980GH | IRFS840
Keywords - FC591601 MOSFET datasheet
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History: 2N6792SM | IRHMS597260 | FC694308 | SSM9980GH | IRFS840



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