FC591601 Specs and Replacement
Type Designator: FC591601
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 7 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
Package: SSMINI5-F4-B
FC591601 substitution
- MOSFET ⓘ Cross-Reference Search
FC591601 datasheet
fc591601.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). FC591601 Silicon N-channel MOS FET For switching circuits Overview Package FC591601 is N-channel dual type small signal MOS FET employed small size Code surface mounting package. SSMini5-F4-B Package dimension clicks here. Click! Features Low drain-source ON resistance RDS(on) typ. = 6 W (VGS = 4.... See More ⇒
fc591301.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). FC591301 Silicon N-channel MOS FET For switching circuits Overview Package FC591301 is N-channel dual type small signal MOS FET employed small size Code surface mounting package. SSMini5-F4-B Package dimension clicks here. Click! Features Low drain-source ON resistance RDS(on) typ. = 2 W (VGS = 4.... See More ⇒
Detailed specifications: FC4A22050L, FC4B21080L, FC4B21300L, FC4B21320L, FC4B22070L, FC4B22180L, FC551601, FC591301, IRF740, FC654601, FC694301, FC694308, FC694309, FC694601, FC6A21060L, FC6B21100L, FC6B21150L
Keywords - FC591601 MOSFET specs
FC591601 cross reference
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