FG654301 Datasheet and Replacement
Type Designator: FG654301
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 7 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: SMINI6-F3-B
FG654301 substitution
FG654301 Datasheet (PDF)
fg654301.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).FG654301Silicon N-channel MOS FET (FET1)Silicon P-channel MOS FET (FET2)For switching circuits Overview PackageFG654301 is N-P channel dual type small signal MOS FET employed small Codesize surface mounting package. SMini6-F3-BPackage dimension clicks here. Click! Features Low drain-source ON
Datasheet: FC8V22090L , FC8V22150L , FC8V22280L , FC8V22290L , FC8V22300L , FC8V3303 , FC8V36060L , FC8V36120L , AON7408 , FG694301 , FG6K4206 , FIR18N20G , FIR210N06G , FIR75N06G , FIR75N075G , FJ330301 , FJ3303010L .
History: APT3580BN | RSR030N06
Keywords - FG654301 MOSFET datasheet
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History: APT3580BN | RSR030N06



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