FG694301 Datasheet and Replacement
Type Designator: FG694301
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 0.125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 7 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: SSMINI6-F3-B
FG694301 substitution
FG694301 Datasheet (PDF)
fg694301.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).FG694301Silicon N-channel MOS FET (FET1)Silicon P-channel MOS FET (FET2)For switching circuits Overview Package CodeFG694301 is N-P channel dual type small signal MOS FET employed small size surface mounting package. SSMini6-F3-B Pin Name Features 1: Source (FET1) 4: Source (FET2) 2: Gate (FET1)
Datasheet: FC8V22150L , FC8V22280L , FC8V22290L , FC8V22300L , FC8V3303 , FC8V36060L , FC8V36120L , FG654301 , IRF9540 , FG6K4206 , FIR18N20G , FIR210N06G , FIR75N06G , FIR75N075G , FJ330301 , FJ3303010L , FJ350301 .
History: PHB95N03LT | SKI03036
Keywords - FG694301 MOSFET datasheet
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History: PHB95N03LT | SKI03036



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