FG6K4206 Datasheet and Replacement
Type Designator: FG6K4206
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 7 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: WSMINI6-F1-B
FG6K4206 substitution
FG6K4206 Datasheet (PDF)
fg6k4206.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).FG6K4206Silicon N-channel MOS FET (FET1)Silicon P-channel MOS FET (FET2)For DC-DC converter circuitsFor switching circuits Overview PackageFG6K4206 is the dual-type MOS FET (N-channel and P-channel) which is Codethe most suitable for DC-DC converter and other switching circuits. WSMini6-F1-BPackage dimen
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