All MOSFET. FIR210N06G Datasheet

 

FIR210N06G Datasheet and Replacement


   Type Designator: FIR210N06G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 330 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 210 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 1120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO-220
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FIR210N06G Datasheet (PDF)

 ..1. Size:1347K  first silicon
 fir210n06g.pdf pdf_icon

FIR210N06G

FIR210N06GN-Channel Enhancement Mode Power MosfetPIN Connection TO-220DescriptionThe FIR210N06G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V ,ID =210A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK2P60D | IRFBG20

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