All MOSFET. FIR210N06G Datasheet

 

FIR210N06G Datasheet and Replacement


   Type Designator: FIR210N06G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 330 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 210 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 1120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO-220
 

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FIR210N06G Datasheet (PDF)

 ..1. Size:1347K  first silicon
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FIR210N06G

FIR210N06GN-Channel Enhancement Mode Power MosfetPIN Connection TO-220DescriptionThe FIR210N06G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V ,ID =210A RDS(ON)

Datasheet: FC8V22300L , FC8V3303 , FC8V36060L , FC8V36120L , FG654301 , FG694301 , FG6K4206 , FIR18N20G , IRFP260 , FIR75N06G , FIR75N075G , FJ330301 , FJ3303010L , FJ350301 , FJ4B0110 , FJ4B0111 , FJ4B0112 .

History: RSS105N03TB | FJ3303010L | S2N7002KW | FJ4B0111 | NDB7061

Keywords - FIR210N06G MOSFET datasheet

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