All MOSFET. FIR75N075G Datasheet

 

FIR75N075G Datasheet and Replacement


   Type Designator: FIR75N075G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 78 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO-220
 

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FIR75N075G Datasheet (PDF)

 ..1. Size:2929K  first silicon
 fir75n075g.pdf pdf_icon

FIR75N075G

FIR75N075GN-Channel Enhancement Mode Power MosfetPIN Connection TO-220DescriptionThe FIR75N075G is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the cell density and reduces the on-resistance; its typical Rdson can reduce to 7.0mohm. Features Advanced trench process technology Specia

 7.1. Size:1794K  first silicon
 fir75n06g.pdf pdf_icon

FIR75N075G

FIR75N06GN-Channel Enhancement Mode Power MosfetPIN Connection TO-220DescriptionThe FIR75N06G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON)

Datasheet: FC8V36060L , FC8V36120L , FG654301 , FG694301 , FG6K4206 , FIR18N20G , FIR210N06G , FIR75N06G , K4145 , FJ330301 , FJ3303010L , FJ350301 , FJ4B0110 , FJ4B0111 , FJ4B0112 , FJ4B0124 , FJ6K0101 .

History: OSG65R070FT3F

Keywords - FIR75N075G MOSFET datasheet

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