FJ350301 Datasheet and Replacement
Type Designator: FJ350301
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 0.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 7 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm
Package: SC-85
- MOSFET Cross-Reference Search
FJ350301 Datasheet (PDF)
fj350301.pdf

FJ3503010LFJ3503010LSilicon P-channel MOSFETUnit: mm For switchingFJ330301 in SMini3 type package Features Low drive voltage: 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) Marking Symbol: U1 Packaging 1. GateFJ3503010L Embossed type (Thermo-compression sealing): 2. Source3 000 pcs / reel (standard) 3. DrainPana
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FDMS9620S | IXTH4N150 | WMM11N80M3 | IRFI7536G
Keywords - FJ350301 MOSFET datasheet
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History: FDMS9620S | IXTH4N150 | WMM11N80M3 | IRFI7536G



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