FJ6K01010L Specs and Replacement
Type Designator: FJ6K01010L
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 190 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
Package: SC-113DA
FJ6K01010L substitution
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FJ6K01010L datasheet
fj6k01010l.pdf
Doc No. TT4-EA-12484 Revision. 2 Product Standards MOS FET FJ6K01010L FJ6K01010L Silicon P-channel MOS FET Unit mm 2.0 For switching 0.2 0.13 6 5 4 Features Low drain-source On-state resistance RDS (on) typ. = 26 m ( VGS = -4.5 V ) Low drive voltage 1.8 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL Level 1 compliant) 1 2 3 0.7 ... See More ⇒
fj6k0101.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). FJ6K0101 Silicon P-channel MOS FET For load switch circuits Overview Package FJ6K0101 is the low on-resistance P-channel MOS FET designed for load Code switch circuits. WSMini6-F1-B Pin Name Features 1 Drain 4 Source Low drain-source ON resistance RDS(on) typ. = 36 mW (VGS = 1.8 V) 2 D... See More ⇒
Detailed specifications: FJ330301, FJ3303010L, FJ350301, FJ4B0110, FJ4B0111, FJ4B0112, FJ4B0124, FJ6K0101, SKD502T, FK330301, FK3303010L, FK330307, FK330308, FK330309, FK330601, FK3306010L, FK350301
Keywords - FJ6K01010L MOSFET specs
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