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FKH0660 Specs and Replacement

Type Designator: FKH0660

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 140 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO-220F

FKH0660 substitution

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FKH0660 datasheet

 ..1. Size:680K  sanken-ele
fkh0660.pdf pdf_icon

FKH0660

60V High Current Low RDS(ON) N ch Trench Power MOSFET EKH06100 / FKH0660 / SKH06100 Features Package TO220 TO220F TO263 VDS -------------------------------------------------------- 60 V EKH06100 FKH0660 SKH06100 ID ------------------------ 100 A (EKH06100, SKH06100) (Back side) RDS(ON) -------------- 3.8 m typ.(VGS = 10 V, ID = 50 A) D Built-in Gate pr... See More ⇒

Detailed specifications: FK8V0303, FK8V0304, FK8V03040L, FK8V03050L, FK8V0306, FK8V0606, FK8V06120L, FKG1020, STF13NM60N, FKI06051, FKI06075, FKI06108, FKI06190, FKI06269, FKI07076, FKI07117, FKI07174

Keywords - FKH0660 MOSFET specs

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