FL6L5203 MOSFET Datasheet: P-Ch, 20V, 1A. Full specification with pinout and replacement list

FL6L5203 Specs and Replacement

Type Designator: FL6L5203

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 12 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm

Package: WSSMINI6-F1

FL6L5203 substitution

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FL6L5203 datasheet

..1. Size:320K panasonic
fl6l5203.pdf pdf_icon

This product complies with the RoHS Directive (EU 2002/95/EC). FL6L5203 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits Overview Package FL6L5203 is P-channel type MOS FET with Schottky Brrier Diode in small Code size surface mouting pakcage. WSSMini6-F1 Package dimension clicks here. ... See More ⇒

7.1. Size:288K 1
fl6l52010l.pdf pdf_icon

Doc No. TT4-EA-12746 Revision. 2 Product Standards MOS FET FL6L52010L FL6L52010L Silicon P-channel MOSFET(FET) Unit mm Silicon epitaxial planar type(SBD) 1.6 For switching 0.2 0.13 For DC-DC Converter 6 5 4 Features Low drain-source ON resistance RDS (on) typ. = 80 m ( VGS = -4.0 V ) Low drive voltage 1.8 V drive Halogen-free / RoHS compliant (EU RoHS... See More ⇒

7.2. Size:370K panasonic
fl6l5207.pdf pdf_icon

Doc No. TT4-EA-13067 Revision. 2 Product Standards MOS FET FL6L52070L FL6L52070L Silicon P-channel MOSFET(FET) Unit mm Silicon epitaxial planar type(SBD) 1.6 For switching 0.2 0.13 For DC-DC Converter 6 5 4 Features Low drain-source ON resistance RDS (on) typ. = 300 m ( VGS = -4.0 V ) Low drive voltage 2.5 V drive Halogen-free / RoHS compliant (EU RoH... See More ⇒

7.3. Size:339K panasonic
fl6l5206.pdf pdf_icon

Doc No. TT4-EA-13066 Revision. 2 Product Standards MOS FET FL6L52060L FL6L52060L Silicon P-channel MOSFET(FET) Unit mm Silicon epitaxial planar type(SBD) 1.6 For switching 0.2 0.13 For DC-DC Converter 6 5 4 Features Low drain-source ON resistance RDS (on) typ. = 80 m ( VGS = -4.0 V ) Low drive voltage 1.8 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94... See More ⇒