SDF100NA40JD Datasheet and Replacement
Type Designator: SDF100NA40JD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 833 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 140(max) nS
Cossⓘ - Output Capacitance: 480 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: NA
SDF100NA40JD substitution
SDF100NA40JD Datasheet (PDF)
sdf10n60 sdp10n60 sdp10n60.pdf
SDP10N60SDF10N60aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) () TypVDSS IDRugged and reliable.600V 10A 0.62 @ VGS=10V TO-220 and TO-220F Package.DG D S G D S GSDP SERIES SDF SERIESTO-220 TO-220FSORDERING INFORMATIONOrdering Code Package M
Datasheet: SDF044JAB-U , SDF054JAA-D , SDF054JAA-S , SDF054JAA-U , SDF054JAB-D , SDF054JAB-S , SDF054JAB-U , SDF100NA40HI , IRFP460 , SDF10N100JEA , SDF10N100JEB , SDF10N100JEC , SDF10N100JED , SDF10N100SXH , SDF10N60 , SDF10N90GAF , SDF11N100GAF .
History: 2SK2484 | UT9435HG-AE3-R | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | P2003EVT | SIHFDC20
Keywords - SDF100NA40JD MOSFET datasheet
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History: 2SK2484 | UT9435HG-AE3-R | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | P2003EVT | SIHFDC20
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