SDF100NA40JD MOSFET. Datasheet pdf. Equivalent

   Type Designator: SDF100NA40JD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 833 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 190(max) nC
   trⓘ - Rise Time: 140(max) nS
   Cossⓘ - Output Capacitance: 480 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: NA

SDF100NA40JD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SDF100NA40JD Datasheet (PDF)

4.1. Size:167K solitron
sdf100na40.pdf

9.1. Size:453K samhop
sdf10n60 sdp10n60 sdp10n60.pdf

SDP10N60SDF10N60aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) () TypVDSS IDRugged and reliable.600V 10A 0.62 @ VGS=10V TO-220 and TO-220F Package.DG D S G D S GSDP SERIES SDF SERIESTO-220 TO-220FSORDERING INFORMATIONOrdering Code Package M

9.2. Size:159K solitron
sdf10n90.pdf