SWP3205 Datasheet. Specs and Replacement

Type Designator: SWP3205  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 780 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO220

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SWP3205 datasheet

 ..1. Size:662K  samwin
sw3205 swp3205.pdf pdf_icon

SWP3205

SAMWIN SW3205 N-channel MOSFET Features TO-220 BVDSS 55V ID 110A High ruggedness RDS(ON) (Max 0.008 )@VGS=10V RDS(ON) 0.008 ohm Gate Charge (Typ 146nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor... See More ⇒

 0.1. Size:613K  samwin
swp3205b.pdf pdf_icon

SWP3205

SW3205B N-channel Enhanced mode TO-220 MOSFET Features BVDSS 60V TO-220 ID 110A High ruggedness Low RDS(ON) (Typ 4.8m )@VGS=10V RDS(ON) 4.8m Low Gate Charge (Typ 80nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application DC-DC Converter, Inverter, 3 1 Synchronous Rectification 1. Gate 2. Drain 3. Source 3 Gene... See More ⇒

Detailed specifications: FM400TU-2A, FM400TU-3A, FM600TU-07A, FM600TU-2A, FM600TU-3A, FM6K6201, FM6L5202, FM6L52020L, IRF540, SWP10N65, SWF10N65, ST16N10, SPP80N06S2-08, SPB80N06S2-08, SPI80N06S2-08, SLP10N70C, SLF10N70C

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