ST16N10 Specs and Replacement
Type Designator: ST16N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 79 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 160 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
ST16N10 substitution
- MOSFET ⓘ Cross-Reference Search
ST16N10 datasheet
st16n10.pdf
ST16N10 N Channel Enhancement Mode MOSFET 16.0A DESCRIPTION ST16N10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST16N10 has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been opt... See More ⇒
Detailed specifications: FM600TU-2A, FM600TU-3A, FM6K6201, FM6L5202, FM6L52020L, SWP3205, SWP10N65, SWF10N65, IRFZ44, SPP80N06S2-08, SPB80N06S2-08, SPI80N06S2-08, SLP10N70C, SLF10N70C, PTW40N50, PJM90H09NTF, HY1606P
Keywords - ST16N10 MOSFET specs
ST16N10 cross reference
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ST16N10 substitution
ST16N10 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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