All MOSFET. ST16N10 Datasheet

 

ST16N10 Datasheet and Replacement


   Type Designator: ST16N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: TO-251 TO-252
 

 ST16N10 substitution

   - MOSFET ⓘ Cross-Reference Search

 

ST16N10 Datasheet (PDF)

 ..1. Size:1056K  stansontech
 st16n10.pdf pdf_icon

ST16N10

ST16N10 N Channel Enhancement Mode MOSFET 16.0A DESCRIPTION ST16N10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST16N10 has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been opt

Datasheet: FM600TU-2A , FM600TU-3A , FM6K6201 , FM6L5202 , FM6L52020L , SWP3205 , SWP10N65 , SWF10N65 , IRFZ44 , SPP80N06S2-08 , SPB80N06S2-08 , SPI80N06S2-08 , SLP10N70C , SLF10N70C , PTW40N50 , PJM90H09NTF , HY1606P .

History: KU2307Q | IRFP4768 | SWU6N80D | WML28N60C4 | STB19NM65N | KCY3008A | WML10N65C4

Keywords - ST16N10 MOSFET datasheet

 ST16N10 cross reference
 ST16N10 equivalent finder
 ST16N10 lookup
 ST16N10 substitution
 ST16N10 replacement

 

 
Back to Top

 


 
.