All MOSFET. SPI80N06S2-08 Datasheet

 

SPI80N06S2-08 Datasheet and Replacement


   Type Designator: SPI80N06S2-08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 215 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 740 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO262
 

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SPI80N06S2-08 Datasheet (PDF)

 ..1. Size:419K  infineon
 spp80n06s2-08 spb80n06s2-08 spi80n06s2-08.pdf pdf_icon

SPI80N06S2-08

SPI80N06S2-08SPP80N06S2-08,SPB80N06S2-08OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 8 m Enhancement modeID 80 A 175C operating temperatureP- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2-08 P- TO220 -3-1 Q67060-S42832N0608SPB80N06S2-08 P- TO263 -

 5.1. Size:208K  1
 spi80n06s-08 spp80n06s-08 spb80n06s-08.pdf pdf_icon

SPI80N06S2-08

SPB80N06S-08SPI80N06S-08, SPP80N06S-08SIPMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Normal Level -Enhancement modeR (SMD version) 7.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperature Green PackagePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive

 5.2. Size:205K  infineon
 spb80n06s-08 spi80n06s-08 spp80n06s-08 spp80n06s spb80n06s spi80n06s-08green.pdf pdf_icon

SPI80N06S2-08

SPB80N06S-08SPI80N06S-08, SPP80N06S-08SIPMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Normal Level -Enhancement modeR (SMD version) 7.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperature Green PackagePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive

 5.3. Size:221K  infineon
 spi80n06s-80 spp80n06s-08.pdf pdf_icon

SPI80N06S2-08

SPB80N06S-08SPI80N06S-08, SPP80N06S-08SIPMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Normal Level -Enhancement modeR (SMD version) 7.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperature Green PackagePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive

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Datasheet: FM6L5202 , FM6L52020L , SWP3205 , SWP10N65 , SWF10N65 , ST16N10 , SPP80N06S2-08 , SPB80N06S2-08 , IRFP260N , SLP10N70C , SLF10N70C , PTW40N50 , PJM90H09NTF , HY1606P , HY1606B , HS50N06PA , FS14UM-10 .

History: NCE70N290T | 2SK2432 | NCEP026N85D | FQAF12P20 | SMMBFJ310LT3G | GPT18N50DGN220FP | BUZ102SL-4

Keywords - SPI80N06S2-08 MOSFET datasheet

 SPI80N06S2-08 cross reference
 SPI80N06S2-08 equivalent finder
 SPI80N06S2-08 lookup
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 SPI80N06S2-08 replacement

 

 
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