SPI80N06S2-08 MOSFET Datasheet: N-Ch, 55V, 80A. Full specification with pinout and replacement list

SPI80N06S2-08 Specs and Replacement

Type Designator: SPI80N06S2-08

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 215 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 740 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO262

SPI80N06S2-08 substitution

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SPI80N06S2-08 datasheet

..1. Size:419K infineon
spp80n06s2-08 spb80n06s2-08 spi80n06s2-08.pdf pdf_icon

SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) 8 m Enhancement mode ID 80 A 175 C operating temperature P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP80N06S2-08 P- TO220 -3-1 Q67060-S4283 2N0608 SPB80N06S2-08 P- TO263 -... See More ⇒

5.1. Size:208K 1
spi80n06s-08 spp80n06s-08 spb80n06s-08.pdf pdf_icon

SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 SIPMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Normal Level -Enhancement mode R (SMD version) 7.7 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature Green Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive ... See More ⇒

5.2. Size:205K infineon
spb80n06s-08 spi80n06s-08 spp80n06s-08 spp80n06s spb80n06s spi80n06s-08green.pdf pdf_icon