All MOSFET. PTW40N50 Datasheet

 

PTW40N50 Datasheet and Replacement


   Type Designator: PTW40N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 540 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 46 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO3P
 

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PTW40N50 Datasheet (PDF)

 ..1. Size:832K  pipsemi
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PTW40N50

PTW40N50 500V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 500V 85m 46A RDS(ON),typ.=85 m@VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver Electric Welder High Efficiency SMPS Ordering Information Part Number Package Brand PTW40N50 TO-

Datasheet: SWP10N65 , SWF10N65 , ST16N10 , SPP80N06S2-08 , SPB80N06S2-08 , SPI80N06S2-08 , SLP10N70C , SLF10N70C , 10N60 , PJM90H09NTF , HY1606P , HY1606B , HS50N06PA , FS14UM-10 , DMG4712SSS , BRCS4435SC , B0210D .

History: SI1021R | IGLD60R190D1

Keywords - PTW40N50 MOSFET datasheet

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