PTW40N50 Specs and Replacement

Type Designator: PTW40N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 540 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 46 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO3P

PTW40N50 substitution

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PTW40N50 datasheet

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 ptw40n50.pdf pdf_icon

PTW40N50

PTW40N50 500V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 500V 85m 46A RDS(ON),typ.=85 m @VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver Electric Welder High Efficiency SMPS Ordering Information Part Number Package Brand PTW40N50 TO-... See More ⇒

Detailed specifications: SWP10N65, SWF10N65, ST16N10, SPP80N06S2-08, SPB80N06S2-08, SPI80N06S2-08, SLP10N70C, SLF10N70C, IRFP260N, PJM90H09NTF, HY1606P, HY1606B, HS50N06PA, FS14UM-10, DMG4712SSS, BRCS4435SC, B0210D

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.