All MOSFET. PTW40N50 Datasheet


PTW40N50 MOSFET. Datasheet pdf. Equivalent

Type Designator: PTW40N50

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 540 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 46 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 138 nC

Rise Time (tr): 39 nS

Drain-Source Capacitance (Cd): 700 pF

Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm

Package: TO3P

PTW40N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


PTW40N50 Datasheet (PDF)

0.1. ptw40n50.pdf Size:832K _pipsemi


PTW40N50 500V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID  Advanced Planar Process 500V 85mΩ 46A  RDS(ON),typ.=85 mΩ@VGS=10V  Low Gate Charge Minimize Switching Loss  Rugged Poly silicon Gate Structure Applications  BLDC Motor Driver  Electric Welder  High Efficiency SMPS Ordering Information Part Number Package Brand PTW40N50 TO-

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .


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