All MOSFET. PJM90H09NTF Datasheet

 

PJM90H09NTF Datasheet and Replacement


   Type Designator: PJM90H09NTF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 143 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO220F
 

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PJM90H09NTF Datasheet (PDF)

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PJM90H09NTF

PJM90H09NTF N-Channel MOSFETTO-220F Feature Fast switching capability R =1.4 @ V =10VDS(on) GS90H09N Ultra low gate charge Low reverse transfer capacitance * * Avalanche energy specified1 2 3PJM90H09NTF Explanation Marking PJ: Brand of abbreviation 90H09N: Product Type M: MOSFET * * Date of Manufacture90H09: Product type N: Channel typ

Datasheet: SWF10N65 , ST16N10 , SPP80N06S2-08 , SPB80N06S2-08 , SPI80N06S2-08 , SLP10N70C , SLF10N70C , PTW40N50 , IRF3710 , HY1606P , HY1606B , HS50N06PA , FS14UM-10 , DMG4712SSS , BRCS4435SC , B0210D , 2SK4119LS .

History: CEP6030L | SSI4N90A | SWK15P03 | SML30B48 | STB10LN80K5 | IRHQ7110 | IRF823FI

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