PJM90H09NTF Specs and Replacement
Type Designator: PJM90H09NTF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 143 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO220F
PJM90H09NTF substitution
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PJM90H09NTF datasheet
pjm90h09ntf.pdf
PJM90H09NTF N-Channel MOSFET TO-220F Feature Fast switching capability R =1.4 @ V =10V DS(on) GS 90H09N Ultra low gate charge Low reverse transfer capacitance * * Avalanche energy specified 1 2 3 PJM90H09NTF Explanation Marking PJ Brand of abbreviation 90H09N Product Type M MOSFET * * Date of Manufacture 90H09 Product type N Channel typ... See More ⇒
Detailed specifications: SWF10N65, ST16N10, SPP80N06S2-08, SPB80N06S2-08, SPI80N06S2-08, SLP10N70C, SLF10N70C, PTW40N50, AO3400, HY1606P, HY1606B, HS50N06PA, FS14UM-10, DMG4712SSS, BRCS4435SC, B0210D, 2SK4119LS
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