PJM90H09NTF MOSFET. Datasheet pdf. Equivalent
Type Designator: PJM90H09NTF
Marking Code: 90H09N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 31 nC
trⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 143 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO220F
PJM90H09NTF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PJM90H09NTF Datasheet (PDF)
..1. Size:1083K pjsemi
pjm90h09ntf.pdf
pjm90h09ntf.pdf
PJM90H09NTF N-Channel MOSFETTO-220F Feature Fast switching capability R =1.4 @ V =10VDS(on) GS90H09N Ultra low gate charge Low reverse transfer capacitance * * Avalanche energy specified1 2 3PJM90H09NTF Explanation Marking PJ: Brand of abbreviation 90H09N: Product Type M: MOSFET * * Date of Manufacture90H09: Product type N: Channel typ
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