All MOSFET. DMG4712SSS Datasheet

 

DMG4712SSS Datasheet and Replacement


   Type Designator: DMG4712SSS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 11.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24.4 nS
   Cossⓘ - Output Capacitance: 164 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SO8
 

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DMG4712SSS Datasheet (PDF)

 ..1. Size:152K  diodes
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DMG4712SSS

DMG4712SSSN-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data High Density UMOS with Schottky Barrier Diode Case: SO-8 Low Leakage Current at High Temperature Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 High Conversion Efficiency Moisture Sensitivity: Level 1 per J-STD-020

 8.1. Size:169K  diodes
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DMG4712SSS

DMG4710SSSN-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary Features DIOFET utilizes a unique patented process to monolithically ID max integrate a MOSFET and a Schottky in a single die to deliver: V(BR)DSS RDS(on) TA = 25C (Note 5) Low RDS(ON) - minimizes conduction losses Low VSD - reducing the losses due to body diode conduction12.5m @

Datasheet: SLP10N70C , SLF10N70C , PTW40N50 , PJM90H09NTF , HY1606P , HY1606B , HS50N06PA , FS14UM-10 , IRFP250N , BRCS4435SC , B0210D , 2SK4119LS , 2SK4098LS , 3N128 , 3N143 , APM2509NU , CHM04N10ZPT .

History: IRHLF7970Z4 | RJK0211DPA | 2SK3402-Z | NTD3055-150T4 | 2P7234A | CSD30N55 | DG4N65-TO220

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