DMG4712SSS MOSFET. Datasheet pdf. Equivalent
Type Designator: DMG4712SSS
Marking Code: G4712SS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 11.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 19.3 nC
trⓘ - Rise Time: 24.4 nS
Cossⓘ - Output Capacitance: 164 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: SO8
DMG4712SSS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMG4712SSS Datasheet (PDF)
dmg4712sss.pdf
DMG4712SSSN-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data High Density UMOS with Schottky Barrier Diode Case: SO-8 Low Leakage Current at High Temperature Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 High Conversion Efficiency Moisture Sensitivity: Level 1 per J-STD-020
dmg4710sss.pdf
DMG4710SSSN-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary Features DIOFET utilizes a unique patented process to monolithically ID max integrate a MOSFET and a Schottky in a single die to deliver: V(BR)DSS RDS(on) TA = 25C (Note 5) Low RDS(ON) - minimizes conduction losses Low VSD - reducing the losses due to body diode conduction12.5m @
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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