DMG4712SSS MOSFET Datasheet: N-Ch, 30V, 11.2A. Full specification with pinout and replacement list

DMG4712SSS Specs and Replacement

Type Designator: DMG4712SSS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 11.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24.4 nS

Cossⓘ - Output Capacitance: 164 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: SO8

DMG4712SSS substitution

- MOSFET ⓘ Cross-Reference Search

DMG4712SSS datasheet

..1. Size:152K diodes
dmg4712sss.pdf pdf_icon

DMG4712SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data High Density UMOS with Schottky Barrier Diode Case SO-8 Low Leakage Current at High Temperature Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 High Conversion Efficiency Moisture Sensitivity Level 1 per J-STD-020... See More ⇒

8.1. Size:169K diodes
dmg4710sss.pdf pdf_icon

DMG4710SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary Features DIOFET utilizes a unique patented process to monolithically ID max integrate a MOSFET and a Schottky in a single die to deliver V(BR)DSS RDS(on) TA = 25 C (Note 5) Low RDS(ON) - minimizes conduction losses Low VSD - reducing the losses due to body diode conduction 12.5m @ ... See More ⇒

Detailed specifications: SLP10N70C, SLF10N70C, PTW40N50, PJM90H09NTF, HY1606P, HY1606B, HS50N06PA, FS14UM-10, IRFB4115, BRCS4435SC, B0210D, 2SK4119LS, 2SK4098LS, 3N128, 3N143, APM2509NU, CHM04N10ZPT