All MOSFET. DMG4712SSS Datasheet

 

DMG4712SSS MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMG4712SSS
   Marking Code: G4712SS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 11.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19.3 nC
   trⓘ - Rise Time: 24.4 nS
   Cossⓘ - Output Capacitance: 164 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SO8

 DMG4712SSS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMG4712SSS Datasheet (PDF)

 ..1. Size:152K  diodes
 dmg4712sss.pdf

DMG4712SSS DMG4712SSS

DMG4712SSSN-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data High Density UMOS with Schottky Barrier Diode Case: SO-8 Low Leakage Current at High Temperature Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 High Conversion Efficiency Moisture Sensitivity: Level 1 per J-STD-020

 8.1. Size:169K  diodes
 dmg4710sss.pdf

DMG4712SSS DMG4712SSS

DMG4710SSSN-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary Features DIOFET utilizes a unique patented process to monolithically ID max integrate a MOSFET and a Schottky in a single die to deliver: V(BR)DSS RDS(on) TA = 25C (Note 5) Low RDS(ON) - minimizes conduction losses Low VSD - reducing the losses due to body diode conduction12.5m @

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: BUK7607-30B

 

 
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