B0210D PDF and Equivalents Search

 

B0210D Specs and Replacement

Type Designator: B0210D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm

Package: TO252

B0210D substitution

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B0210D datasheet

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B0210D

B0210D N-Channel 100-V (D-S) MOSFET General Description Features B0210D is the N-Channel logic enhancement mode R =220m @V =10V DS(ON) GS power field effect transistors to provide excellent R =270m @V =4.5V DS(ON) GS R (on), low gate charge and low gate resistance. DS High Density Cell Design for Low R DS(ON) It s up to 100V operation voltage is suitable for ... See More ⇒

Detailed specifications: PTW40N50, PJM90H09NTF, HY1606P, HY1606B, HS50N06PA, FS14UM-10, DMG4712SSS, BRCS4435SC, P55NF06, 2SK4119LS, 2SK4098LS, 3N128, 3N143, APM2509NU, CHM04N10ZPT, DTP4503, IRF60R217

Keywords - B0210D MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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