All MOSFET. B0210D Datasheet

 

B0210D Datasheet and Replacement


   Type Designator: B0210D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
   Package: TO252
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B0210D Datasheet (PDF)

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B0210D

B0210D N-Channel 100-V (D-S) MOSFET General Description Features B0210D is the N-Channel logic enhancement mode R =220m@V =10V DS(ON) GSpower field effect transistors to provide excellent R =270m@V =4.5V DS(ON) GSR (on), low gate charge and low gate resistance. DS High Density Cell Design for Low R DS(ON)Its up to 100V operation voltage is suitable for

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: H2N65D | SP8M21FRA | FDMS86181 | NTP30N06 | STB70NFS03LT4 | SIHFZ48 | NTR4503NT1

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