IRF60R217 MOSFET Datasheet: N-Ch, 60V, 58A. Full specification with pinout and replacement list

IRF60R217 Specs and Replacement

Type Designator: IRF60R217

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 58 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0099 Ohm

Package: TO252

IRF60R217 substitution

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IRF60R217 datasheet

..1. Size:470K infineon
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IR MOSFET StrongIRFET IRF60R217 Application D VDSS 60V Brushed Motor drive applications BLDC Motor drive applications RDS(on) typ. 8.0m Battery powered circuits G Half-bridge and full-bridge topologies max 9.9m Synchronous rectifier applications S ID 58A Resonant mode power supplies OR-ing and redunda... See More ⇒

..2. Size:242K inchange semiconductor
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isc N-Channel MOSFET Transistor IRF60R217, IIRF60R217 FEATURES Static drain-source on-resistance RDS(on) 9.9m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous rectifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol... See More ⇒

9.1. Size:524K international rectifier
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