IRF60R217 - Даташиты. Аналоги. Основные параметры

IR MOSFET StrongIRFET IRF60R217 Application D VDSS 60V Brushed Motor drive applications BLDC Motor drive applications RDS(on) typ. 8.0mBattery powered circuits G Half-bridge and full-bridge topologies max 9.9m Synchronous rectifier applications SID 58A Resonant mode power supplies OR-ing and redunda

isc N-Channel MOSFET Transistor IRF60R217, IIRF60R217FEATURESStatic drain-source on-resistance:RDS(on)9.9mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous rectifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

StrongIRFET IRF60DM206 DirectFET N-Channel Power MOSFET Application Brushed motor drive applications VDSS 60V BLDC motor drive applications RDS(on) typ. Battery powered circuits 2.2m Half-bridge and full-bridge topologies max 2.9m Synchronous rectifier applications Resonant mode power supplies ID 130A

IR MOSFET StrongIRFET IRF60B217 HEXFET Power MOSFET Application D VDSS 60V Brushed Motor drive applications BLDC Motor drive applications RDS(on) typ. 7.3mBattery powered circuits G max 9.0m Half-bridge and full-bridge topologies S Synchronous rectifier applications ID 60A Resonant mode power supplies

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF60B217IIRF60B217FEATURESStatic drain-source on-resistance:RDS(on) 9.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAX