All MOSFET. PFP12N65 Datasheet

 

PFP12N65 Datasheet and Replacement


   Type Designator: PFP12N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 240 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.57 Ohm
   Package: TO220
 

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PFP12N65 Datasheet (PDF)

 ..1. Size:1430K  china
 pfp12n65 pff12n65.pdf pdf_icon

PFP12N65

PFP12N65/PFF12N65 FEATURES 650V N-Channel MOSFET Originative New Design 100% EAS Test Rugged Gate Oxide Technology Drain BVDSS = 650 V Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Gate RDS(on) typ = 0.46 Unequalled Gate Charge : 48 nC (Typ.) E

Datasheet: 2SK4119LS , 2SK4098LS , 3N128 , 3N143 , APM2509NU , CHM04N10ZPT , DTP4503 , IRF60R217 , 2N7002 , PFF12N65 , PK6D0BA , SVF830T , SVF830D , SVF830MJ , SVF830FJ , SVF830F , N0100P .

History: SI8806DB

Keywords - PFP12N65 MOSFET datasheet

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