All MOSFET. PFP12N65 Datasheet

 

PFP12N65 MOSFET. Datasheet pdf. Equivalent


   Type Designator: PFP12N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 240 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 47.5 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.57 Ohm
   Package: TO220

 PFP12N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PFP12N65 Datasheet (PDF)

 ..1. Size:1430K  china
 pfp12n65 pff12n65.pdf

PFP12N65 PFP12N65

PFP12N65/PFF12N65 FEATURES 650V N-Channel MOSFET Originative New Design 100% EAS Test Rugged Gate Oxide Technology Drain BVDSS = 650 V Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Gate RDS(on) typ = 0.46 Unequalled Gate Charge : 48 nC (Typ.) E

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NVD5C688NL

 

 
Back to Top