PFP12N65 Specs and Replacement
Type Designator: PFP12N65
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 240 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 230 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.57 Ohm
Package: TO220
PFP12N65 substitution
- MOSFET ⓘ Cross-Reference Search
PFP12N65 datasheet
pfp12n65 pff12n65.pdf
PFP12N65/PFF12N65 FEATURES 650V N-Channel MOSFET Originative New Design 100% EAS Test Rugged Gate Oxide Technology Drain BVDSS = 650 V Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Gate RDS(on) typ = 0.46 Unequalled Gate Charge 48 nC (Typ.) E... See More ⇒
Detailed specifications: 2SK4119LS, 2SK4098LS, 3N128, 3N143, APM2509NU, CHM04N10ZPT, DTP4503, IRF60R217, 2N7002, PFF12N65, PK6D0BA, SVF830T, SVF830D, SVF830MJ, SVF830FJ, SVF830F, N0100P
Keywords - PFP12N65 MOSFET specs
PFP12N65 cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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