PFP12N65 MOSFET. Datasheet pdf. Equivalent
Type Designator: PFP12N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 240 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 47.5 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 230 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.57 Ohm
Package: TO220
PFP12N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PFP12N65 Datasheet (PDF)
..1. Size:1430K china
pfp12n65 pff12n65.pdf
pfp12n65 pff12n65.pdf
PFP12N65/PFF12N65 FEATURES 650V N-Channel MOSFET Originative New Design 100% EAS Test Rugged Gate Oxide Technology Drain BVDSS = 650 V Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Gate RDS(on) typ = 0.46 Unequalled Gate Charge : 48 nC (Typ.) E
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
