SVF830MJ PDF and Equivalents Search

 

SVF830MJ Specs and Replacement

Type Designator: SVF830MJ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37.4 nS

Cossⓘ - Output Capacitance: 72 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO251

SVF830MJ substitution

- MOSFET ⓘ Cross-Reference Search

 

SVF830MJ datasheet

 8.1. Size:597K  silan
 svf830t-d-mj-fj-f.pdf pdf_icon

SVF830MJ

SVF830T/D/MJ/FJ/F_Datasheet 5A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF830T/D/MJ/FJ/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching perfo... See More ⇒

Detailed specifications: CHM04N10ZPT, DTP4503, IRF60R217, PFP12N65, PFF12N65, PK6D0BA, SVF830T, SVF830D, K3569, SVF830FJ, SVF830F, N0100P, N0300N, N0300P, N0301N, N0301P, N0302P

Keywords - SVF830MJ MOSFET specs

 SVF830MJ cross reference

 SVF830MJ equivalent finder

 SVF830MJ pdf lookup

 SVF830MJ substitution

 SVF830MJ replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

↑ Back to Top
.