SVF830MJ MOSFET. Datasheet pdf. Equivalent
Type Designator: SVF830MJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12 nC
trⓘ - Rise Time: 37.4 nS
Cossⓘ - Output Capacitance: 72 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO251
SVF830MJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVF830MJ Datasheet (PDF)
8.1. Size:597K silan
svf830t-d-mj-fj-f.pdf
svf830t-d-mj-fj-f.pdf
SVF830T/D/MJ/FJ/F_Datasheet 5A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF830T/D/MJ/FJ/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching perfo
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