SVF830MJ Datasheet and Replacement
Type Designator: SVF830MJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 37.4 nS
Cossⓘ - Output Capacitance: 72 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO251
SVF830MJ substitution
SVF830MJ Datasheet (PDF)
svf830t-d-mj-fj-f.pdf

SVF830T/D/MJ/FJ/F_Datasheet 5A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF830T/D/MJ/FJ/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching perfo
Datasheet: CHM04N10ZPT , DTP4503 , IRF60R217 , PFP12N65 , PFF12N65 , PK6D0BA , SVF830T , SVF830D , 12N60 , SVF830FJ , SVF830F , N0100P , N0300N , N0300P , N0301N , N0301P , N0302P .
History: SVF830FJ | MTB070P15J3 | MTB09P03E3 | TSM2N60CP
Keywords - SVF830MJ MOSFET datasheet
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History: SVF830FJ | MTB070P15J3 | MTB09P03E3 | TSM2N60CP



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