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N0400P Specs and Replacement

Type Designator: N0400P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO-252

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N0400P datasheet

 ..1. Size:225K  renesas
 n0400p.pdf pdf_icon

N0400P

Preliminary Data Sheet R07DS0500EJ0200 N0400P Rev.2.00 Aug 19, 2011 MOS FIELD EFFECT TRANSISTOR Description The N0400P is P-channel MOS Field Effect Transistor designed for high current and 2.5 V drive switching applications. Features 2.5 V drive available Super low on-state resistance RDS(on)1 = 40 m MAX. (VGS = -4.5 V, ID = -7.5 A) RDS(on)2 = 73 m MAX. (VGS... See More ⇒

Detailed specifications: SVF830FJ, SVF830F, N0100P, N0300N, N0300P, N0301N, N0301P, N0302P, 5N65, N0412N, N0413N, NT4N03, NTA4001NT1, NTA4151PT1, NTA4153NT1, NTA7002NT1, NTB125N02R

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