N0400P Datasheet and Replacement
Type Designator: N0400P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO-252
N0400P substitution
N0400P Datasheet (PDF)
n0400p.pdf

Preliminary Data Sheet R07DS0500EJ0200N0400P Rev.2.00Aug 19, 2011MOS FIELD EFFECT TRANSISTOR Description The N0400P is P-channel MOS Field Effect Transistor designed for high current and 2.5 V drive switching applications. Features 2.5 V drive available Super low on-state resistance RDS(on)1 = 40 m MAX. (VGS = -4.5 V, ID = -7.5 A) RDS(on)2 = 73 m MAX. (VGS
Datasheet: SVF830FJ , SVF830F , N0100P , N0300N , N0300P , N0301N , N0301P , N0302P , IRF4905 , N0412N , N0413N , NT4N03 , NTA4001NT1 , NTA4151PT1 , NTA4153NT1 , NTA7002NT1 , NTB125N02R .
History: SVS60R360FJHE3
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History: SVS60R360FJHE3



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