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N0413N Specs and Replacement

Type Designator: N0413N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 119 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 580 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm

Package: TO-263

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N0413N datasheet

 ..1. Size:210K  renesas
 n0413n.pdf pdf_icon

N0413N

Preliminary Data Sheet R07DS0555EJ0100 N0413N Rev.1.00 Nov 07, 2011 N-CHANNEL MOSFET FOR SWITCHING Description The N0413N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS (on) = 3.3 m MAX. (VGS = 10 V, ID = 50 A) Low input capacitance Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V) H... See More ⇒

Detailed specifications: N0100P, N0300N, N0300P, N0301N, N0301P, N0302P, N0400P, N0412N, IRFB3607, NT4N03, NTA4001NT1, NTA4151PT1, NTA4153NT1, NTA7002NT1, NTB125N02R, NTB13N10, NTB18N06

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