N0413N Datasheet and Replacement
Type Designator: N0413N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 119 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 580 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
Package: TO-263
N0413N substitution
N0413N Datasheet (PDF)
n0413n.pdf
Preliminary Data Sheet R07DS0555EJ0100N0413N Rev.1.00Nov 07, 2011N-CHANNEL MOSFET FOR SWITCHING Description The N0413N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS (on) = 3.3 m MAX. (VGS = 10 V, ID = 50 A) Low input capacitance Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V) H
Datasheet: N0100P , N0300N , N0300P , N0301N , N0301P , N0302P , N0400P , N0412N , IRF1407 , NT4N03 , NTA4001NT1 , NTA4151PT1 , NTA4153NT1 , NTA7002NT1 , NTB125N02R , NTB13N10 , NTB18N06 .
History: BUK7635-55 | 2P7154AC | SML1004RKN | IXTM75N10 | STB80NF03L-04T4 | HY4903P | FMH08N80E
Keywords - N0413N MOSFET datasheet
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History: BUK7635-55 | 2P7154AC | SML1004RKN | IXTM75N10 | STB80NF03L-04T4 | HY4903P | FMH08N80E
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