NT4N03 Specs and Replacement

Type Designator: NT4N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOIC-8

NT4N03 substitution

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NT4N03 datasheet

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NT4N03

NTMD4N03R2, NVMD4N03R2 Power MOSFET 4 Amps, 30 Volts N-Channel SO-8 Dual http //onsemi.com Features Designed for use in low voltage, high speed switching applications VDSS RDS(ON) Typ ID Max Ultra Low On-Resistance Provides 30 V 48 mW @ VGS = 10 V 4.0 A Higher Efficiency and Extends Battery Life - RDS(on) = 0.048 W, VGS = 10 V (Typ) - RDS(on) = 0.065 W, VGS = 4.5 V (Typ) N... See More ⇒

Detailed specifications: N0300N, N0300P, N0301N, N0301P, N0302P, N0400P, N0412N, N0413N, AON6380, NTA4001NT1, NTA4151PT1, NTA4153NT1, NTA7002NT1, NTB125N02R, NTB13N10, NTB18N06, NTB18N06G

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