All MOSFET. NTB125N02R Datasheet

 

NTB125N02R Datasheet and Replacement


   Type Designator: NTB125N02R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.98 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 15.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 1105 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
   Package: D2PAK
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NTB125N02R Datasheet (PDF)

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NTB125N02R

NTB125N02R, NTP125N02RPower MOSFET125 A, 24 V N-ChannelTO-220, D2PAKFeatures Planar HD3e Process for Fast Switching Performancehttp://onsemi.com Body Diode for Low trr and Qrr and Optimized for SynchronousOperation 125 AMPERES, 24 VOLTS Low Ciss to Minimize Driver LossRDS(on) = 3.7 mW (Typ) Optimized Qgd and RDS(on) for Shoot-through Protection Low Gate Ch

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History: FIR11N90ANG | SSW65R190S2 | SM4186T9RL | SRT10N160LD | APT10021JFLL | NCE30P12BS | NP180N04TUJ

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