NTB125N02R MOSFET. Datasheet pdf. Equivalent
Type Designator: NTB125N02R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.98 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 15.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 23.6 nC
trⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 1105 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
Package: D2PAK
NTB125N02R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTB125N02R Datasheet (PDF)
..1. Size:84K onsemi
ntb125n02r ntb125n02r ntp125n02r ntp125n02rg.pdf
ntb125n02r ntb125n02r ntp125n02r ntp125n02rg.pdf
NTB125N02R, NTP125N02RPower MOSFET125 A, 24 V N-ChannelTO-220, D2PAKFeatures Planar HD3e Process for Fast Switching Performancehttp://onsemi.com Body Diode for Low trr and Qrr and Optimized for SynchronousOperation 125 AMPERES, 24 VOLTS Low Ciss to Minimize Driver LossRDS(on) = 3.7 mW (Typ) Optimized Qgd and RDS(on) for Shoot-through Protection Low Gate Ch
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
