All MOSFET. NTB125N02R Datasheet

 

NTB125N02R Datasheet and Replacement


   Type Designator: NTB125N02R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.98 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 1105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
   Package: D2PAK
 

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NTB125N02R Datasheet (PDF)

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NTB125N02R

NTB125N02R, NTP125N02RPower MOSFET125 A, 24 V N-ChannelTO-220, D2PAKFeatures Planar HD3e Process for Fast Switching Performancehttp://onsemi.com Body Diode for Low trr and Qrr and Optimized for SynchronousOperation 125 AMPERES, 24 VOLTS Low Ciss to Minimize Driver LossRDS(on) = 3.7 mW (Typ) Optimized Qgd and RDS(on) for Shoot-through Protection Low Gate Ch

Datasheet: N0400P , N0412N , N0413N , NT4N03 , NTA4001NT1 , NTA4151PT1 , NTA4153NT1 , NTA7002NT1 , 20N50 , NTB13N10 , NTB18N06 , NTB18N06G , NTB18N06L , NTB23N03R , NTB23N03RG , NTB25P06G , NTB27N06LT4 .

History: IPL65R099C7 | WML9N90D1B | NTMFS6H836N | HD60N75 | WMK08N70EM | SML40L57 | HFW5N60S

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