NTB125N02R Specs and Replacement

Type Designator: NTB125N02R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.98 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 1105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm

Package: D2PAK

NTB125N02R substitution

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NTB125N02R datasheet

 ..1. Size:84K  onsemi
 ntb125n02r ntb125n02r ntp125n02r ntp125n02rg.pdf pdf_icon

NTB125N02R

NTB125N02R, NTP125N02R Power MOSFET 125 A, 24 V N-Channel TO-220, D2PAK Features Planar HD3e Process for Fast Switching Performance http //onsemi.com Body Diode for Low trr and Qrr and Optimized for Synchronous Operation 125 AMPERES, 24 VOLTS Low Ciss to Minimize Driver Loss RDS(on) = 3.7 mW (Typ) Optimized Qgd and RDS(on) for Shoot-through Protection Low Gate Ch... See More ⇒

Detailed specifications: N0400P, N0412N, N0413N, NT4N03, NTA4001NT1, NTA4151PT1, NTA4153NT1, NTA7002NT1, STP80NF70, NTB13N10, NTB18N06, NTB18N06G, NTB18N06L, NTB23N03R, NTB23N03RG, NTB25P06G, NTB27N06LT4

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