All MOSFET. NTB13N10 Datasheet

 

NTB13N10 Datasheet and Replacement


   Type Designator: NTB13N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 64.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
   Package: D2PAK
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NTB13N10 Datasheet (PDF)

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NTB13N10

NTB13N10Power MOSFET100 V, 13 A, N-ChannelEnhancement-Mode D2PAKFeatures http://onsemi.com Source-to-Drain Diode Recovery Time Comparable to a DiscreteFast Recovery DiodeV(BR)DSS RDS(on) TYP ID MAX Avalanche Energy Specified100 V 165 mW @ 10 V 13 A IDSS and RDS(on) Specified at Elevated Temperature Mounting Information Provided for the D2PAK Package Pb-Fre

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SM6A12NSFP | FCPF7N60YDTU

Keywords - NTB13N10 MOSFET datasheet

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