NTB13N10 Specs and Replacement

Type Designator: NTB13N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 64.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm

Package: D2PAK

NTB13N10 substitution

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NTB13N10 datasheet

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NTB13N10

NTB13N10 Power MOSFET 100 V, 13 A, N-Channel Enhancement-Mode D2PAK Features http //onsemi.com Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode V(BR)DSS RDS(on) TYP ID MAX Avalanche Energy Specified 100 V 165 mW @ 10 V 13 A IDSS and RDS(on) Specified at Elevated Temperature Mounting Information Provided for the D2PAK Package Pb-Fre... See More ⇒

Detailed specifications: N0412N, N0413N, NT4N03, NTA4001NT1, NTA4151PT1, NTA4153NT1, NTA7002NT1, NTB125N02R, IRFP450, NTB18N06, NTB18N06G, NTB18N06L, NTB23N03R, NTB23N03RG, NTB25P06G, NTB27N06LT4, NTB30N06G

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.