All MOSFET. NTB13N10 Datasheet

 

NTB13N10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTB13N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 64.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 14 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
   Package: D2PAK

 NTB13N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTB13N10 Datasheet (PDF)

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 ntb13n10-d ntb13n10.pdf

NTB13N10 NTB13N10

NTB13N10Power MOSFET100 V, 13 A, N-ChannelEnhancement-Mode D2PAKFeatures http://onsemi.com Source-to-Drain Diode Recovery Time Comparable to a DiscreteFast Recovery DiodeV(BR)DSS RDS(on) TYP ID MAX Avalanche Energy Specified100 V 165 mW @ 10 V 13 A IDSS and RDS(on) Specified at Elevated Temperature Mounting Information Provided for the D2PAK Package Pb-Fre

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SSM3K320T

 

 
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