All MOSFET. NTB13N10 Datasheet

 

NTB13N10 Datasheet and Replacement


   Type Designator: NTB13N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 64.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
   Package: D2PAK
 

 NTB13N10 substitution

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NTB13N10 Datasheet (PDF)

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NTB13N10

NTB13N10Power MOSFET100 V, 13 A, N-ChannelEnhancement-Mode D2PAKFeatures http://onsemi.com Source-to-Drain Diode Recovery Time Comparable to a DiscreteFast Recovery DiodeV(BR)DSS RDS(on) TYP ID MAX Avalanche Energy Specified100 V 165 mW @ 10 V 13 A IDSS and RDS(on) Specified at Elevated Temperature Mounting Information Provided for the D2PAK Package Pb-Fre

Datasheet: N0412N , N0413N , NT4N03 , NTA4001NT1 , NTA4151PT1 , NTA4153NT1 , NTA7002NT1 , NTB125N02R , IRF1407 , NTB18N06 , NTB18N06G , NTB18N06L , NTB23N03R , NTB23N03RG , NTB25P06G , NTB27N06LT4 , NTB30N06G .

History: HAT2279N

Keywords - NTB13N10 MOSFET datasheet

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