NTB23N03R MOSFET. Datasheet pdf. Equivalent
Type Designator: NTB23N03R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 37.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 3.76 nC
trⓘ - Rise Time: 14.9 nS
Cossⓘ - Output Capacitance: 108 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: D2PAK
NTB23N03R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTB23N03R Datasheet (PDF)
..1. Size:87K onsemi
ntb23n03r ntb23n03rg.pdf
ntb23n03r ntb23n03rg.pdf
NTB23N03RPower MOSFET23 Amps, 25 VoltsN-Channel D2PAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgehttp://onsemi.comcircuits.Features23 AMPERES, 25 VOLTS Pb-Free Packages are AvailableRDS(on) = 32 mW (Typ)Typical ApplicationsN-CHANNEL Planar HD3e Process for Fast Switching Performance
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