NTB30N06G MOSFET. Datasheet pdf. Equivalent
Type Designator: NTB30N06G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 88.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 27 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 23.4 nC
trⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 250 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: D2PAK
NTB30N06G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTB30N06G Datasheet (PDF)
ntb30n06g ntp30n06 ntp30n06 ntb30n06.pdf
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ntb30n20.pdf
NTB30N20Power MOSFET30 Amps, 200 VoltsN-Channel Enhancement-Mode D2PAKhttp://onsemi.comFeatures Source-to-Drain Diode Recovery Time Comparable to a DiscreteVDSS RDS(ON) TYP ID MAXFast Recovery Diode Avalanche Energy Specified200 V 68 mW @ VGS = 10 V 30 A IDSS and RDS(on) Specified at Elevated Temperature Mounting Information Provided for the D2PAK PackageN-
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: NTB35N15G