All MOSFET. NTB30N06G Datasheet

 

NTB30N06G Datasheet and Replacement


   Type Designator: NTB30N06G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 88.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 27 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: D2PAK
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NTB30N06G Datasheet (PDF)

 ..1. Size:78K  onsemi
ntb30n06g ntp30n06 ntp30n06 ntb30n06.pdf pdf_icon

NTB30N06G

NTP30N06, NTB30N06Power MOSFET30 Amps, 60 VoltsN-Channel TO-220 and D2PAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.30 AMPERES, 60 VOLTSFeaturesRDS(on) = 42 mW Pb-Free Packages are AvailableN-ChannelDTypical Applications Power Supplies ConvertersG

 6.1. Size:75K  onsemi
ntb30n06l ntp30n06l ntp30n06l ntb30n06l.pdf pdf_icon

NTB30N06G

NTP30N06L, NTB30N06LPower MOSFET30 Amps, 60 Volts, Logic Level,N-Channel TO-220 and D2PAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.30 AMPERES, 60 VOLTSFeaturesRDS(on) = 46 mW Pb-Free Packages are AvailableN-ChannelDTypical Applications Power Supplies

 8.1. Size:78K  onsemi
ntb30n20.pdf pdf_icon

NTB30N06G

NTB30N20Power MOSFET30 Amps, 200 VoltsN-Channel Enhancement-Mode D2PAKhttp://onsemi.comFeatures Source-to-Drain Diode Recovery Time Comparable to a DiscreteVDSS RDS(ON) TYP ID MAXFast Recovery Diode Avalanche Energy Specified200 V 68 mW @ VGS = 10 V 30 A IDSS and RDS(on) Specified at Elevated Temperature Mounting Information Provided for the D2PAK PackageN-

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History: SIZ900DT | BUZ84 | IRLR024 | AON6794 | ZXM66N02N8TA | CED05N8 | BL10N70-A

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