NTB30N20 Datasheet and Replacement
Type Designator: NTB30N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 380 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.081 Ohm
Package: D2PAK
NTB30N20 substitution
NTB30N20 Datasheet (PDF)
ntb30n20.pdf

NTB30N20Power MOSFET30 Amps, 200 VoltsN-Channel Enhancement-Mode D2PAKhttp://onsemi.comFeatures Source-to-Drain Diode Recovery Time Comparable to a DiscreteVDSS RDS(ON) TYP ID MAXFast Recovery Diode Avalanche Energy Specified200 V 68 mW @ VGS = 10 V 30 A IDSS and RDS(on) Specified at Elevated Temperature Mounting Information Provided for the D2PAK PackageN-
ntb30n06l ntp30n06l ntp30n06l ntb30n06l.pdf

NTP30N06L, NTB30N06LPower MOSFET30 Amps, 60 Volts, Logic Level,N-Channel TO-220 and D2PAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.30 AMPERES, 60 VOLTSFeaturesRDS(on) = 46 mW Pb-Free Packages are AvailableN-ChannelDTypical Applications Power Supplies
ntb30n06g ntp30n06 ntp30n06 ntb30n06.pdf

NTP30N06, NTB30N06Power MOSFET30 Amps, 60 VoltsN-Channel TO-220 and D2PAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.30 AMPERES, 60 VOLTSFeaturesRDS(on) = 42 mW Pb-Free Packages are AvailableN-ChannelDTypical Applications Power Supplies ConvertersG
Datasheet: NTB18N06G , NTB18N06L , NTB23N03R , NTB23N03RG , NTB25P06G , NTB27N06LT4 , NTB30N06G , NTB30N06L , SKD502T , NTB35N15G , NTB4302 , NTB45N06G , NTB45N06LG , NTB52N10G , NTB5404NT4G , NTB5405NG , NTB5411NT4G .
History: VS3606AE
Keywords - NTB30N20 MOSFET datasheet
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History: VS3606AE



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