NTB35N15G Datasheet and Replacement
Type Designator: NTB35N15G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 178 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 37 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 125 nS
Cossⓘ - Output Capacitance: 450 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: D2PAK
NTB35N15G substitution
NTB35N15G Datasheet (PDF)
ntb35n15 ntb35n15g.pdf
NTB35N15Power MOSFET37 Amps, 150 VoltsN-Channel Enhancement-Mode D2PAKhttp://onsemi.comFeatures Source-to-Drain Diode Recovery Time Comparable to a Discrete37 AMPERES, 150 VOLTSFast Recovery Diode50 mW @ VGS = 10 V Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated TemperatureN-Channel Mounting Information Provided for the D2PAK PackageD
ntb35n15.pdf
NTB35N15Power MOSFET37 Amps, 150 VoltsN-Channel Enhancement-Mode D2PAKhttp://onsemi.comFeatures Source-to-Drain Diode Recovery Time Comparable to a Discrete37 AMPERES, 150 VOLTSFast Recovery Diode50 mW @ VGS = 10 V Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated TemperatureN-Channel Mounting Information Provided for the D2PAK PackageD
Datasheet: NTB18N06L , NTB23N03R , NTB23N03RG , NTB25P06G , NTB27N06LT4 , NTB30N06G , NTB30N06L , NTB30N20 , SI2302 , NTB4302 , NTB45N06G , NTB45N06LG , NTB52N10G , NTB5404NT4G , NTB5405NG , NTB5411NT4G , NTB5412NT4G .
History: AO6604 | STS8DN3LLH5 | VB162KX | PPMT20V4E | HMS17N65F | HMS170N03D | AP65SL099DI
Keywords - NTB35N15G MOSFET datasheet
NTB35N15G cross reference
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NTB35N15G substitution
NTB35N15G replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: AO6604 | STS8DN3LLH5 | VB162KX | PPMT20V4E | HMS17N65F | HMS170N03D | AP65SL099DI
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