All MOSFET. NTB35N15G Datasheet

 

NTB35N15G Datasheet and Replacement


   Type Designator: NTB35N15G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 178 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 37 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 125 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: D2PAK
 

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NTB35N15G Datasheet (PDF)

 ..1. Size:80K  onsemi
 ntb35n15 ntb35n15g.pdf pdf_icon

NTB35N15G

NTB35N15Power MOSFET37 Amps, 150 VoltsN-Channel Enhancement-Mode D2PAKhttp://onsemi.comFeatures Source-to-Drain Diode Recovery Time Comparable to a Discrete37 AMPERES, 150 VOLTSFast Recovery Diode50 mW @ VGS = 10 V Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated TemperatureN-Channel Mounting Information Provided for the D2PAK PackageD

 6.1. Size:80K  onsemi
 ntb35n15.pdf pdf_icon

NTB35N15G

NTB35N15Power MOSFET37 Amps, 150 VoltsN-Channel Enhancement-Mode D2PAKhttp://onsemi.comFeatures Source-to-Drain Diode Recovery Time Comparable to a Discrete37 AMPERES, 150 VOLTSFast Recovery Diode50 mW @ VGS = 10 V Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated TemperatureN-Channel Mounting Information Provided for the D2PAK PackageD

Datasheet: NTB18N06L , NTB23N03R , NTB23N03RG , NTB25P06G , NTB27N06LT4 , NTB30N06G , NTB30N06L , NTB30N20 , IRFZ46N , NTB4302 , NTB45N06G , NTB45N06LG , NTB52N10G , NTB5404NT4G , NTB5405NG , NTB5411NT4G , NTB5412NT4G .

History: SIR878ADP | TPC8073 | IRFL024Z | YJP70G10A | AOB27S60L | 2SK3819 | STP12N120K5

Keywords - NTB35N15G MOSFET datasheet

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