NTB52N10G PDF and Equivalents Search

 

NTB52N10G Specs and Replacement

Type Designator: NTB52N10G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 178 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 52 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 95 nS

Cossⓘ - Output Capacitance: 620 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: D2PAK

NTB52N10G substitution

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NTB52N10G datasheet

 ..1. Size:114K  onsemi
 ntb52n10g.pdf pdf_icon

NTB52N10G

NTB52N10 Power MOSFET 52 Amps, 100 Volts N-Channel Enhancement-Mode D2PAK http //onsemi.com Features Source-to-Drain Diode Recovery Time Comparable to a Discrete VDSS RDS(ON) TYP ID MAX Fast Recovery Diode Avalanche Energy Specified 100 V 23 mW @ 10 V 52 A IDSS and RDS(on) Specified at Elevated Temperature Mounting Information Provided for the D2PAK Package N-Chan... See More ⇒

 6.1. Size:118K  onsemi
 ntb52n10.pdf pdf_icon

NTB52N10G

NTB52N10 Power MOSFET 52 Amps, 100 Volts N-Channel Enhancement-Mode D2PAK http //onsemi.com Features Source-to-Drain Diode Recovery Time Comparable to a Discrete VDSS RDS(ON) TYP ID MAX Fast Recovery Diode Avalanche Energy Specified 100 V 23 mW @ 10 V 52 A IDSS and RDS(on) Specified at Elevated Temperature Mounting Information Provided for the D2PAK Package N-Chan... See More ⇒

Detailed specifications: NTB27N06LT4, NTB30N06G, NTB30N06L, NTB30N20, NTB35N15G, NTB4302, NTB45N06G, NTB45N06LG, IRF520, NTB5404NT4G, NTB5405NG, NTB5411NT4G, NTB5412NT4G, NTB5426NT4G, NTB5605PG, NTB5860N, NTB5860NL

Keywords - NTB52N10G MOSFET specs

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