All MOSFET. NTB52N10G Datasheet

 

NTB52N10G Datasheet and Replacement


   Type Designator: NTB52N10G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 178 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 52 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 620 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: D2PAK
 

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NTB52N10G Datasheet (PDF)

 ..1. Size:114K  onsemi
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NTB52N10G

NTB52N10Power MOSFET52 Amps, 100 VoltsN-Channel Enhancement-Mode D2PAKhttp://onsemi.comFeatures Source-to-Drain Diode Recovery Time Comparable to a DiscreteVDSS RDS(ON) TYP ID MAXFast Recovery Diode Avalanche Energy Specified100 V23 mW @ 10 V52 A IDSS and RDS(on) Specified at Elevated Temperature Mounting Information Provided for the D2PAK PackageN-Chan

 6.1. Size:118K  onsemi
 ntb52n10.pdf pdf_icon

NTB52N10G

NTB52N10Power MOSFET52 Amps, 100 VoltsN-Channel Enhancement-Mode D2PAKhttp://onsemi.comFeatures Source-to-Drain Diode Recovery Time Comparable to a DiscreteVDSS RDS(ON) TYP ID MAXFast Recovery Diode Avalanche Energy Specified100 V23 mW @ 10 V52 A IDSS and RDS(on) Specified at Elevated Temperature Mounting Information Provided for the D2PAK PackageN-Chan

Datasheet: NTB27N06LT4 , NTB30N06G , NTB30N06L , NTB30N20 , NTB35N15G , NTB4302 , NTB45N06G , NTB45N06LG , CS150N03A8 , NTB5404NT4G , NTB5405NG , NTB5411NT4G , NTB5412NT4G , NTB5426NT4G , NTB5605PG , NTB5860N , NTB5860NL .

History: SWB088R08E8T | NVTFS6H880N

Keywords - NTB52N10G MOSFET datasheet

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