NTB52N10G Datasheet and Replacement
Type Designator: NTB52N10G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 178 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 52 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 95 nS
Cossⓘ - Output Capacitance: 620 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: D2PAK
NTB52N10G substitution
NTB52N10G Datasheet (PDF)
ntb52n10g.pdf
NTB52N10Power MOSFET52 Amps, 100 VoltsN-Channel Enhancement-Mode D2PAKhttp://onsemi.comFeatures Source-to-Drain Diode Recovery Time Comparable to a DiscreteVDSS RDS(ON) TYP ID MAXFast Recovery Diode Avalanche Energy Specified100 V23 mW @ 10 V52 A IDSS and RDS(on) Specified at Elevated Temperature Mounting Information Provided for the D2PAK PackageN-Chan
ntb52n10.pdf
NTB52N10Power MOSFET52 Amps, 100 VoltsN-Channel Enhancement-Mode D2PAKhttp://onsemi.comFeatures Source-to-Drain Diode Recovery Time Comparable to a DiscreteVDSS RDS(ON) TYP ID MAXFast Recovery Diode Avalanche Energy Specified100 V23 mW @ 10 V52 A IDSS and RDS(on) Specified at Elevated Temperature Mounting Information Provided for the D2PAK PackageN-Chan
Datasheet: NTB27N06LT4 , NTB30N06G , NTB30N06L , NTB30N20 , NTB35N15G , NTB4302 , NTB45N06G , NTB45N06LG , STF13NM60N , NTB5404NT4G , NTB5405NG , NTB5411NT4G , NTB5412NT4G , NTB5426NT4G , NTB5605PG , NTB5860N , NTB5860NL .
History: HAT2287WP
Keywords - NTB52N10G MOSFET datasheet
NTB52N10G cross reference
NTB52N10G equivalent finder
NTB52N10G lookup
NTB52N10G substitution
NTB52N10G replacement
History: HAT2287WP
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