All MOSFET. NTB5860N Datasheet

 

NTB5860N MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTB5860N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 283 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 220 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 180 nC
   trⓘ - Rise Time: 117 nS
   Cossⓘ - Output Capacitance: 1125 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: D2PAK

 NTB5860N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTB5860N Datasheet (PDF)

 ..1. Size:113K  onsemi
 ntb5860n ntp5860n nvb5860n.pdf

NTB5860N NTB5860N

NTB5860N, NTP5860N,NVB5860NN-Channel Power MOSFET60 V, 220 A, 3.0 mWFeatureshttp://onsemi.com Low RDS(on) High Current Capability V(BR)DSS RDS(on) MAX ID MAX 100% Avalanche Tested60 V 3.0 mW @ 10 V 220 A These Devices are Pb-Free, Halogen Free and are RoHS Compliant NVB Prefix for Automotive and Other Applications RequiringDUnique Site and Control Change

 0.1. Size:112K  onsemi
 ntb5860nl nvb5860nl.pdf

NTB5860N NTB5860N

NTB5860NL, NTP5860NL,NVB5860NLN-Channel Power MOSFET60 V, 220 A, 3.0 mWFeatureshttp://onsemi.com Low RDS(on) High Current CapabilityV(BR)DSS RDS(on) MAX ID MAX 100% Avalanche Tested3.0 mW @ 10 V60 V 220 A These Devices are Pb-Free, Halogen Free and are RoHS Compliant3.6 mW @ 4.5 V NVB Prefix for Automotive and Other Applications RequiringUnique Site

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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