NTB65N02R Datasheet. Specs and Replacement

Type Designator: NTB65N02R  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 58 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 53 nS

Cossⓘ - Output Capacitance: 456 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: D2PAK

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NTB65N02R datasheet

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NTB65N02R

NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK Features http //onsemi.com Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss V(BR)DSS RDS(on) TYP ID MAX Low Ciss to Minimize Driver Loss 24 V 8.4 mW @ 10 V 65 A Low Gate Charge Pb-Free Packages are Available* D MAXIMUM RATINGS (TJ = 25 C Unless otherwis... See More ⇒

Detailed specifications: NTB5860N, NTB5860NL, NTB60N06G, NTB60N06L, NTB6410ANG, NTB6411ANG, NTB6412ANG, NTB6413ANG, FTP08N06A, NTB65N02RT4, NTB75N03-006, NTB75N03L09T4, NTB75N03R, NTB75N06G, NTB75N06L, NTB85N03, NTB90N02

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