NTB65N02R MOSFET. Datasheet pdf. Equivalent
Type Designator: NTB65N02R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 58 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9.5 nC
trⓘ - Rise Time: 53 nS
Cossⓘ - Output Capacitance: 456 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
Package: D2PAK
NTB65N02R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTB65N02R Datasheet (PDF)
..1. Size:73K onsemi
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ntb65n02r ntb65n02rt4 ntb65n02r ntp65n02r ntp65n02r.pdf
NTB65N02R, NTP65N02RPower MOSFET65 A, 24 V N-ChannelTO-220, D2PAKFeatureshttp://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction LossV(BR)DSS RDS(on) TYP ID MAX Low Ciss to Minimize Driver Loss24 V 8.4 mW @ 10 V 65 A Low Gate Charge Pb-Free Packages are Available*DMAXIMUM RATINGS (TJ = 25C Unless otherwis
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