NTB65N02R PDF and Equivalents Search

 

NTB65N02R Specs and Replacement


   Type Designator: NTB65N02R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 58 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 53 nS
   Cossⓘ - Output Capacitance: 456 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: D2PAK
 

 NTB65N02R substitution

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NTB65N02R datasheet

 ..1. Size:73K  onsemi
 ntb65n02r ntb65n02rt4 ntb65n02r ntp65n02r ntp65n02r.pdf pdf_icon

NTB65N02R

NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK Features http //onsemi.com Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss V(BR)DSS RDS(on) TYP ID MAX Low Ciss to Minimize Driver Loss 24 V 8.4 mW @ 10 V 65 A Low Gate Charge Pb-Free Packages are Available* D MAXIMUM RATINGS (TJ = 25 C Unless otherwis... See More ⇒

Detailed specifications: NTB5860N , NTB5860NL , NTB60N06G , NTB60N06L , NTB6410ANG , NTB6411ANG , NTB6412ANG , NTB6413ANG , IRF830 , NTB65N02RT4 , NTB75N03-006 , NTB75N03L09T4 , NTB75N03R , NTB75N06G , NTB75N06L , NTB85N03 , NTB90N02 .

History: 2N3796

Keywords - NTB65N02R MOSFET specs

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