All MOSFET. NTB65N02RT4 Datasheet

 

NTB65N02RT4 Datasheet and Replacement


   Type Designator: NTB65N02RT4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 58 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 53 nS
   Cossⓘ - Output Capacitance: 456 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: D2PAK
 

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NTB65N02RT4 Datasheet (PDF)

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NTB65N02RT4

NTB65N02R, NTP65N02RPower MOSFET65 A, 24 V N-ChannelTO-220, D2PAKFeatureshttp://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction LossV(BR)DSS RDS(on) TYP ID MAX Low Ciss to Minimize Driver Loss24 V 8.4 mW @ 10 V 65 A Low Gate Charge Pb-Free Packages are Available*DMAXIMUM RATINGS (TJ = 25C Unless otherwis

Datasheet: NTB5860NL , NTB60N06G , NTB60N06L , NTB6410ANG , NTB6411ANG , NTB6412ANG , NTB6413ANG , NTB65N02R , 60N06 , NTB75N03-006 , NTB75N03L09T4 , NTB75N03R , NTB75N06G , NTB75N06L , NTB85N03 , NTB90N02 , NTBV45N06 .

History: TPC8029 | R6009ENJ | CRJD390N65GC

Keywords - NTB65N02RT4 MOSFET datasheet

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