NTB90N02 MOSFET. Datasheet pdf. Equivalent
Type Designator: NTB90N02
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 90 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 29 nC
trⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 900 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
Package: D2PAK
NTB90N02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTB90N02 Datasheet (PDF)
..1. Size:69K onsemi
ntb90n02 ntb90n02 ntp90n02 ntp90n02.pdf
ntb90n02 ntb90n02 ntp90n02 ntp90n02.pdf
NTB90N02, NTP90N02Power MOSFET90 Amps, 24 VoltsN-Channel D2PAK and TO-220Designed for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgehttp://onsemi.comcircuits.Features V(BR)DSS RDS(on) TYP ID MAX Pb-Free Packages are Available5.0 mW @ 10 V24 V 90 ATypical Applications7.5 mW @ 4.5 V Power Supplies
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