NTD32N06LG Datasheet and Replacement
Type Designator: NTD32N06LG
Marking Code: 32N06L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 93.75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 23 nC
tr ⓘ - Rise Time: 221 nS
Cossⓘ - Output Capacitance: 343 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: DPAK
NTD32N06LG substitution
NTD32N06LG Datasheet (PDF)
ntd32n06l ntd32n06l ntd32n06lg.pdf
NTD32N06LPower MOSFET32 Amps, 60 VoltsLogic Level, N-Channel DPAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.VDSS RDS(ON) TYP ID MAXFeatures Smaller Package than MTB30N06VL60 V23.7 mW32 A Lower RDS(on), VDS(on), and Total Gate Charge Lower and Tighter
ntd32n06-001 ntd32n06 ntd32n06-d.pdf
NTD32N06Power MOSFET32 Amps, 60 Volts, N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeatures Pb-Free Packages are AvailableV(BR)DSS RDS(on) TYP ID MAX Smaller Package than MTB36N06V60 V 26 mW 32 A Lower RDS(on) Lower VDS(on)N-Channel
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