NTD32N06LG MOSFET Datasheet: N-Ch, 60V, 32A. Full specification with pinout and replacement list

NTD32N06LG Specs and Replacement

Type Designator: NTD32N06LG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 93.75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 221 nS

Cossⓘ - Output Capacitance: 343 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: DPAK

NTD32N06LG substitution

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NTD32N06LG datasheet

..1. Size:98K onsemi
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NTD32N06L Power MOSFET 32 Amps, 60 Volts Logic Level, N-Channel DPAK Designed for low voltage, high speed switching applications in http //onsemi.com power supplies, converters and power motor controls and bridge circuits. VDSS RDS(ON) TYP ID MAX Features Smaller Package than MTB30N06VL 60 V 23.7 mW 32 A Lower RDS(on), VDS(on), and Total Gate Charge Lower and Tighter ... See More ⇒

6.1. Size:66K onsemi
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NTD32N06 Power MOSFET 32 Amps, 60 Volts, N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http //onsemi.com Features Pb-Free Packages are Available V(BR)DSS RDS(on) TYP ID MAX Smaller Package than MTB36N06V 60 V 26 mW 32 A Lower RDS(on) Lower VDS(on) N-Channel ... See More ⇒

Detailed specifications: NTD3055-094-1G, NTD3055-150T4, NTD3055L104T4G, NTD3055L170T4G, NTD30N02G, NTD32N06, NTD32N06-001, NTD32N06L, IRF9540N, NTD3808N-1G, NTD3813N-1G, NTD3817N-1G, NTD40N03R-1G, NTD40N03RG, NTD4302-1G, NTD4804N-1G, NTD4804NA-1G