All MOSFET. NTD50N03R Datasheet

 

NTD50N03R Datasheet and Replacement


   Type Designator: NTD50N03R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9.6 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: DPAK
 

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NTD50N03R Datasheet (PDF)

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NTD50N03R

NTD50N03RPower MOSFET25 V, 45 A, Single N-Channel, DPAKFeatures Planar Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) TYP ID MAX Pb-Free Packages are Available12.5 mW @ 10 VApplications25 V 45 A19 mW @ 4.5 V VCORE DC-

Datasheet: NTD4904N-1G , NTD4909N-1G , NTD4910N-1G , NTD4960N-1G , NTD4963N-1G , NTD4965N-1G , NTD4969N-1G , NTD4970N-1G , IRFB31N20D , NTD5406NG , NTD5407NG , NTD5413NT4G , NTD5414NT4G , NTD5802NT4G , NTD5804NT4G , NTD5805NT4G , NTD5806NT4G .

History: 2SJ612 | CEU01N65

Keywords - NTD50N03R MOSFET datasheet

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