NTD50N03R Specs and Replacement
Type Designator: NTD50N03R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9.6 nS
Cossⓘ - Output Capacitance: 300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: DPAK
NTD50N03R substitution
- MOSFET ⓘ Cross-Reference Search
NTD50N03R datasheet
ntd50n03r-d ntd50n03r.pdf
NTD50N03R Power MOSFET 25 V, 45 A, Single N-Channel, DPAK Features Planar Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) TYP ID MAX Pb-Free Packages are Available 12.5 mW @ 10 V Applications 25 V 45 A 19 mW @ 4.5 V VCORE DC-... See More ⇒
Detailed specifications: NTD4904N-1G, NTD4909N-1G, NTD4910N-1G, NTD4960N-1G, NTD4963N-1G, NTD4965N-1G, NTD4969N-1G, NTD4970N-1G, IRF2807, NTD5406NG, NTD5407NG, NTD5413NT4G, NTD5414NT4G, NTD5802NT4G, NTD5804NT4G, NTD5805NT4G, NTD5806NT4G
Keywords - NTD50N03R MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: BLS6G2731S-120
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