2SJ0672 Specs and Replacement
Type Designator: 2SJ0672
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 7 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
Electrical Characteristics
ton ⓘ - Turn-on Time: 850 nS
Cossⓘ - Output Capacitance: 7 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 30 Ohm
Package: SSSMINI3
2SJ0672 substitution
- MOSFET ⓘ Cross-Reference Search
2SJ0672 datasheet
2sj0672.pdf
Silicon MOSFETs (Small Signal) 2SJ0672 Silicon P-channel MOSFET Unit mm For switching circuits 0.33+0.05 0.10+0.05 0.02 0.02 3 Features Ultra small package switching MOSFETs SSS-Mini type package, allowing downsizing of the equipment and 0.23+0.05 1 2 0.02 automatic insertion through the tape packing. (0.40)(0.40) 0.80 0.05 1.20 0.05 Absolute Maximum ... See More ⇒
Detailed specifications: NTD5413NT4G, NTD5414NT4G, NTD5802NT4G, NTD5804NT4G, NTD5805NT4G, NTD5806NT4G, NTD5807NT4G, NTD5862N-1G, 7N60, 7N60L-A-TA3, 7N60L-B-TA3, 7N60L-A-TF3, 7N60L-B-TF3, DFP50N06, HY3208P, HY3208M, HY3208B
Keywords - 2SJ0672 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: BLS6G2731-6G
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