DFP50N06 PDF and Equivalents Search

 

DFP50N06 Specs and Replacement

Type Designator: DFP50N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 105 nS

Cossⓘ - Output Capacitance: 440 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO220M

DFP50N06 substitution

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DFP50N06 datasheet

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 dfp50n06.pdf pdf_icon

DFP50N06

DFP50N06 Pb DFP50N06 Pb Free Plating Product 50A,60V Heatsink Planar N-Channel Power MOSFET Features 2. Drain 50A, 60V, RDS(on) = 0.022 @VGS = 10 V BVDSS = 60V Low gate charge ( typical 31 nC) Low Crss ( typical 65 pF) RDS(ON) = 0.022 ohm Fast switching 1. Gate 100% avalanche tested ID = 50A ... See More ⇒

Detailed specifications: NTD5806NT4G, NTD5807NT4G, NTD5862N-1G, 2SJ0672, 7N60L-A-TA3, 7N60L-B-TA3, 7N60L-A-TF3, 7N60L-B-TF3, IRF9640, HY3208P, HY3208M, HY3208B, HY3208PS, HY3208PM, PK502BA, SP8M3, SPP80N06S2-09

Keywords - DFP50N06 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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