SP8M3 PDF and Equivalents Search

 

SP8M3 Specs and Replacement

Type Designator: SP8M3

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm

Package: SOP8

SP8M3 substitution

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SP8M3 datasheet

 ..1. Size:93K  rohm
 sp8m3.pdf pdf_icon

SP8M3

SP8M3 Transistors Switching SP8M3 External dimensions (Unit mm) Features 1) Low on-resistance. SOP8 2) Built-in G-S Protection Diode. 5.0 0.2 3) Small and Surface Mount Package (SOP8). Application Power switching, DC / DC converter. 0.2 0.1 0.4 0.1 1.27 0.1 Each lead has same dimensions Equivalent circuit Absolute maximum ratings (Ta=25 C) Limits (8) ... See More ⇒

 0.1. Size:1025K  cn vbsemi
 sp8m3-tb.pdf pdf_icon

SP8M3

SP8M3-TB www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at VGS... See More ⇒

Detailed specifications: 7N60L-B-TF3, DFP50N06, HY3208P, HY3208M, HY3208B, HY3208PS, HY3208PM, PK502BA, AOD4184A, SPP80N06S2-09, SPB80N06S2-09, SST4091, SST4092, SST4093, SVF2N65F, TPHR8504PL, TSF65R300S1

Keywords - SP8M3 MOSFET specs

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