All MOSFET. SP8M3 Datasheet

 

SP8M3 Datasheet and Replacement


   Type Designator: SP8M3
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm
   Package: SOP8
 

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SP8M3 Datasheet (PDF)

 ..1. Size:93K  rohm
 sp8m3.pdf pdf_icon

SP8M3

SP8M3 Transistors Switching SP8M3 External dimensions (Unit : mm) Features 1) Low on-resistance. SOP82) Built-in G-S Protection Diode. 5.00.23) Small and Surface Mount Package (SOP8). Application Power switching, DC / DC converter. 0.20.10.40.11.270.1Each lead has same dimensions Equivalent circuit Absolute maximum ratings (Ta=25C) Limits (8)

 0.1. Size:1025K  cn vbsemi
 sp8m3-tb.pdf pdf_icon

SP8M3

SP8M3-TBwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VGS

Datasheet: 7N60L-B-TF3 , DFP50N06 , HY3208P , HY3208M , HY3208B , HY3208PS , HY3208PM , PK502BA , HY1906P , SPP80N06S2-09 , SPB80N06S2-09 , SST4091 , SST4092 , SST4093 , SVF2N65F , TPHR8504PL , TSF65R300S1 .

History: HAT3008R | BLA6H1011-600 | STL70N10F3 | AP01N40G-HF | DMC31D5UDJ | P0660AS | NVMFD6H852NL

Keywords - SP8M3 MOSFET datasheet

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