NTD60N03-001 MOSFET Datasheet: N-Ch, 28V, 60A. Full specification with pinout and replacement list

NTD60N03-001 Specs and Replacement

Type Designator: NTD60N03-001

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 28 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 680 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: DPAK

NTD60N03-001 substitution

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NTD60N03-001 datasheet

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NTD60N03 Power MOSFET 60 Amps, 28 Volts N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge http //onsemi.com circuits. V(BR)DSS RDS(on) TYP ID MAX Typical Applications 28 V 6.1 mW 60 A Power Supplies Converters N-Channel Power Motor Controls D Bridge Circuits MAXIMUM RATING... See More ⇒

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NTD60N02R Power MOSFET 62 A, 25 V, N-Channel, DPAK Features Planar HD3e Process for Fast Switching Performance http //onsemi.com Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss V(BR)DSS RDS(on) TYP ID MAX Low Gate Charge 25 V 8.4 mW @ 10 V 62 A Optimized for High Side Switching Requirements in High-Efficiency DC-DC Converters Pb-Free... See More ⇒

Detailed specifications: TSF65R300S1, UFZ24NL-TA3, UFZ24NL-TM3, UFZ24NL-TN3, NTD5865N-1G, NTD5867NL-1G, NTD60N02R, NTD60N02R-035, IRF640, NTD6414AN-1G, NTD6415AN-1G, NTD6416AN-1G, NTD65N03R, NTD65N03R-035, NTD65N03R-1G, NTD6600N, NTD70N03R-001