All MOSFET. NTD60N03-001 Datasheet

 

NTD60N03-001 MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTD60N03-001
   Marking Code: T4228
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 680 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: DPAK

 NTD60N03-001 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTD60N03-001 Datasheet (PDF)

 ..1. Size:231K  onsemi
 ntd60n03-001.pdf

NTD60N03-001 NTD60N03-001

NTD60N03Power MOSFET60 Amps, 28 VoltsN-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgehttp://onsemi.comcircuits.V(BR)DSS RDS(on) TYP ID MAXTypical Applications28 V 6.1 mW 60 A Power Supplies ConvertersN-Channel Power Motor ControlsD Bridge CircuitsMAXIMUM RATING

 7.1. Size:79K  onsemi
 ntd60n02r-035 ntd60n02r ntd60n02r.pdf

NTD60N03-001 NTD60N03-001

NTD60N02RPower MOSFET62 A, 25 V, N-Channel, DPAKFeatures Planar HD3e Process for Fast Switching Performancehttp://onsemi.com Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver LossV(BR)DSS RDS(on) TYP ID MAX Low Gate Charge25 V 8.4 mW @ 10 V 62 A Optimized for High Side Switching Requirements inHigh-Efficiency DC-DC Converters Pb-Free

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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